We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications i......

相比于第三代半导体材料碳化硅（SiC）和氮化镓（GaN），氧化镓（Ga2O3）具有禁带宽度更大、击穿电场更强、吸收截止边更短、生长成本更低等优点......

A simple semi-empirical model for radiative and Auger recombination constants is suggested, accounting for hole localiza......

We demonstrate the first commercial production–ready white light-emitting diodes (LEDs) for the general illumination ma......

The impact of carbon doping on the background carrier conduction in GaN has been investigated.It is found that the incor......

Direct alcohol fuel cells (DAFCs) have received wide attention as a new type of clean energy device because of their hig......

新材料在整个世界成为了最重要、快成长的工业之一。在材料科技的重要进步在国民经济，日常生活和我们的国家的国家防卫上生产了深刻......

纳米半导体硅薄膜是利用等离子体增强化学气相沉积（ＰＥＣＶＤ）方法制备的，制备可以很好地进行调节控制。纳米硅薄膜由两种组元：纳米尺度晶粒组元......